Crystallization of two-dimensional structures comprising multiple thin films

ABSTRACT

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of and priority to U.S. PatentProvisional Application No. 62/884,537, filed on Aug. 8, 2019. Theentire disclosure of the foregoing application is incorporated byreference herein.

BACKGROUND

Currently, a thin film of single-crystalline (SC) alloy material areobtained using costly SC substrates made of a material chemically andphysically compatible to that of a SC thin film that is deposited on theSC substrate. Formation of SC thin films of alloy materials on a SCsubstrate is done through a rather expensive process such as epitaxy. Asa result, the use of a thin film of SC alloy materials or respectivemultiple thin films is contingent upon the availability of anappropriate SC substrate thereby severely limiting its utilization.Thus, there is a need for alternative methods of forming one or morethin films of SC alloy materials on arbitrary substrates.

Crystallization of thin film materials by exploiting laser-inducedcrystallization has been advancing for the past four decades. Thisunique thin film technique has been predominantly used in processingthin film materials made of a single chemical element, with asignificant emphasis on thin film materials comprised of a singlechemical element like silicon (Si), used for the development of thinfilm transistors. However, harnessing this technique to extend its usefor thin film materials containing multiple chemical elements (e.g.,metal oxides) unlocks applications currently not accessible usingconventional techniques. Thus, there is also a need for novel method offorming SC metal oxide selectively formed from metal oxide thin films.

SUMMARY

The present disclosure provides a composite having a two-dimensional(2D) structure that includes one or more thin films. The structure isformed from non-single-crystalline (NSC) alloy materials on a NSCsubstrate. Each of the NSC alloy materials has a specific chemicalcomposition associated with, for instance, its cations and/or anions. Apart of the 2D structure is crystallized—forming single-crystal (SC)—asthe material undergoes melting at an elevated temperature and subsequentsolidification upon cooling. The resulting 2D structure on the NSCsubstrate includes one or more thin films or multiple thin films made ofSC alloy materials that have chemical compositions not significantlydifferent from those of their original chemical compositions.

The present disclosure also provides a method by which a thin film of SCalloy materials (e.g., group III-V compound semiconductors) orrespective multiple thin films is formed on a substrate from anon-single-crystalline (NSC) material, such as glass, or on a SCsubstrate highly-incompatible (e.g., silicon). Suitable SC alloymaterials include a range of materials generally expressed by chemicalformulas A_(x)B_(1-x), A_(x)B_(1-x)C, A_(x)B_(1-x)C_(y)D_(1-y), etc.,where A, B, C, and D represent different chemical elements and x and ydenote their respective chemical compositions. It is envisioned that thenumber of different chemical elements in an alloy material isunrestricted.

A SC alloy material may be represented by AB_(x), where A is a chemicalelement that acts as a cation and B is a chemical element that acts asan anion that is more electronegative than A. In embodiments, the Aelement may be gallium (Ga) and the B element may be arsenic (As) ornitrogen (N). Suitable SC alloy materials include GaAs, GaN.

When the AB_(x) alloy is initially formed with a specific chemicalcomposition x, in particular, in the form of NSC thin film, the AB_(x)alloy undergoes a phase transition (e.g., a transition from solid toliquid and vice versa). The B element often exhibits a strong tendencyto evaporate and/or sublimate preferentially in comparison to the Aelement, resulting in a change in the chemical composition x of theAB_(x) alloy upon such a phase transition. In some cases, a thin filmmade of the AB_(x) alloy may turn into pure A upon the phase transition,which presents a problem if the goal is to form a SC layer of AB_(x)from NSC layer of AB_(x). The present disclosure provides a method forcrystallization of NSC thin films formed from AB_(x) alloy—by which athin film of SC alloy materials (e.g., AB_(x)) or respective multiplethin films is formed on a NSC substrate or on a chemically-incompatibleSC substrate with minimum change in chemical composition x in the AB_(x)alloy as originally set for a NSC thin film. The disclosed methodsovercome the problems of conventional methods, which require materialsmade of a single primary chemical element as NSC thin film and as suchare not suitable for use with alloy materials that contain more than twoprimary chemical elements.

According to one embodiment of the present disclosure, a method forforming a composite is disclosed. The method includes applying a thinfilm formed from NSC alloy onto a substrate; applying a protection filmonto the thin film; and supplying energy to the thin film through atleast one of the protection film or the substrate.

According to one aspect of the above embodiment, the substrate is formedfrom a NSC alloy that is physically and chemically different from theNSC alloy of the thin film.

According to another aspect of the above embodiment, supplying energyincludes focusing a laser beam. The laser beam may have suchnon-Gaussian beam profile as a line pattern having a length from about 1micron (μm) to about 10 mm. The focused laser beam may be perpendicularto a plane defined by the thin film and parallel to a plurality of edgepatterns defined through the thin film.

According to a further aspect of the above embodiment, the laser beammay have such non-Gaussian beam profile as a chevron pattern having twoline portions with a distance between end points of the two lineportions being from about 1 μm to about 10 mm.

According to yet another aspect of the above embodiment, the NSC alloyhas a formula of AB_(x), wherein A is gallium and B is selected from thegroup consisting of arsenic and nitrogen.

According to one aspect of the above embodiment, the method furtherincludes forming a pattern on the substrate, wherein the pattern is atleast one of a depression or a protrusion. The substrate has a firstplanar surface and the pattern has a second planar surface that isparallel to the first planar surface.

The present disclosure also provides for laser crystallization of metalfluorides, metal chlorides, and metal oxides. Suitable metals includeiron, aluminum, titanium, gallium, indium, germanium, tin, lead,antimony, bismuth, vanadium, chromium, beryllium, manganese, cobalt,nickel, copper, zinc, zirconium, ruthenium, osmium, rhodium, andiridium. In embodiments, suitable metal oxides include oxides of anysuitable metal, and include, but are not limited to, silver oxide(Ag₂O), aluminum oxide (Al₂O), cuprous oxide (Cu₂O), and the like.

A continuous-wave laser diode with a micrometer-scale chevron-shapedbeam profile, namely, a micro-chevron laser beam (μ-CLB), is used toform single-crystal cuprous oxide (Cu₂O) strips crystallized in cupricoxide (CuO) thin films. Initially, the CuO thin films are deposited onfused silica substrates and may be covered with an optional amorphouscarbon cap layer. Electron backscatter diffraction, Raman spectroscopy,photoluminescence spectroscopy, and UV-Vis spectroscopy were used toinvestigate the crystallinity and optical properties of the Cu₂O stripsrevealing their unique characteristics associated with thecrystallization process.

Laser crystallization is a useful technique for forming devicestructures with minimum thermal budgets because of its capability ofheating and treating a thin film locally and selectively, minimizingthermal impacts on the substrate on which a thin film is deposited.Crystallization of a thin film driven by thermal energy provided via aheat source highly localized within the thin film offers a substantialadvantage in particular when a substrate is made of materials with lowglass-transition temperature or low melting temperature, such aspolymers and covalent-network-glasses, minimizing undesirable physicaland chemical interactions between the thin film and the substrate.

The method of SC crystallization according to the present disclosure maybe used in laser crystallization of semiconductor thin films onarbitrary substrates and is of great value because conventional methodsby which single-crystal thin films are obtained often employ epitaxialgrowth that requires expensive precursors, complex process control, andcostly single-crystal substrates.

Previously, laser crystallization was applied to alloy semiconductorthin films containing multiple chemical elements (e.g., group IVcompound semiconductors, group III-V compound semiconductors, metaloxide semiconductors); however, in all these cases, a femtosecond laseror excimer laser with a Gaussian beam profile was used, however, nominallateral size of crystalline domains are on the order of 1 μm which isoften much smaller than the minimum length required for integratingdevices (e.g., transistors) on a chip resulting in undesirablenonuniformity over the chip. Using these laser types poses considerablechallenges in developing laser crystallization processes that areeconomically sound and provide crystalline domains large enough forfabricating practical devices.

The present disclosure demonstrates laser crystallization of metaloxides, such as Cu₂O strips, using continuous-wave (CW) laser diode (LD)with a micrometer-scale chevron-shaped beam profile-micro-chevron laserbeam (μ-CLB). The crystallization was induced in thin films made ofnon-single-crystal CuO (cupric oxide) capped with an amorphous carbon(a-C) cap layer, resulting in the formation of a single-crystal Cu₂O(cuprous oxide) strip with a semi-infinite length. These crystallizedstrips exhibited peculiar optical properties reflecting the uniquecharacteristics of the μ-CLB crystallization process.

According to one embodiment of the present disclosure, a method forforming a composite is disclosed. The method includes applying a thinfilm formed from a NSC oxide onto a substrate; applying a protectionfilm onto the thin film; and supplying energy to the thin film throughat least one of the protection film or the substrate to form a SC oxide.

According to one aspect of the above embodiment, the NSC oxide is cupricoxide. The SC oxide is cuprous oxide.

According to another aspect of the above embodiment, supplying energyincludes focusing a laser beam having a micron chevron pattern. Thelaser may have a wavelength from about 400 nm to about 450 nm. The NSCoxide has a thickness selected to absorb energy of the laser beam at thewavelength. The thickness may be from about 120 nm to about 140 nm.

According to a further aspect of the above embodiment, the protectionfilm is formed from an amorphous carbon. The protection film has athickness from about 5 nm to about 20 nm.

According to yet another aspect of the above embodiment, a semiconductordevice is formed using the method of the above embodiment.

BRIEF DESCRIPTION OF DRAWINGS

Various embodiments of the present disclosure will be described hereinbelow with reference to the figures, in which like reference numeralsdesignate identical or corresponding elements in each of the severalviews, wherein:

FIG. 1 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereon;

FIG. 2 is a schematic cross-sectional view of a substrate at multiplestages of another process for forming a SC thin film disposed thereon;

FIG. 3 is a schematic cross-sectional view of a substrate at multiplestages of yet another process for forming a SC thin film disposedthereon according to a further embodiment of the present disclosure;

FIG. 4 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to one embodiment of the present disclosure;

FIG. 5 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to another embodiment of the present disclosure;

FIG. 6 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to a further embodiment of the present disclosure;

FIG. 7 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to yet another embodiment of the present disclosure;

FIG. 8 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereon;

FIG. 9 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to one embodiment of the present disclosure;

FIG. 10 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to one embodiment of the present disclosure;

FIG. 11 is a schematic cross-sectional view of a substrate at multiplestages of a process for forming a SC thin film disposed thereonaccording to an embodiment of the present disclosure;

FIG. 12 is a schematic cross-sectional view of a substrate of NSC andcupric oxide (CuO) at multiple stages of a process for forming a SC thinfilm of cuprous oxide (Cu₂O) disposed thereon according to anotherembodiment of the present disclosure;

FIG. 13 shows electron backscatter diffraction (EBSD) crystalorientation maps in two directions, a corresponding color map (ingrayscale), an EBSD boundary map, and a posture of cubic unit cellscorresponding to a first EBSD orientation map according to an embodimentof the present disclosure;

FIG. 14 is a scanning electron microscope image of the SC thin film ofFIG. 12 according to an embodiment of the present disclosure;

FIG. 15 are Raman spectra collected of the substrate of FIG. 12 from theNSC-CuO region and the SC thin film of Cu₂O strip, which was verticallyshifted for clarity according to an embodiment of the presentdisclosure; and

FIG. 16 are normalized photoluminescence and absorbance spectra of theNSC-CuO region and the SC-Cu₂O strips of the substrate of FIG. 12according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

With reference to FIG. 1, an epitaxy method of forming a composite 11having SC thin film 10 disposed on a SC substrate 12 alloy is shown. InFIGS. 1-12 shows a three dimensional coordinate marker XYZ to show theperspective of the substrate. The SC thin film 10 is formed from anAB_(x) alloy, which includes an A chemical element that acts as a cationand a B chemical element that acts as an anion that is moreelectronegative than A. In embodiments, A element may be gallium (Ga).In further embodiments, B element may be arsenic (As), nitrogen (N).Suitable SC alloy materials include GaAs, GaN.

The SC thin film 10 is formed on a SC substrate 12 that is compatiblewith the AB_(x) alloy. The SC substrate 12 may also be formed from anAB_(x) alloy. As shown in FIG. 1 at step (a), the SC substrate 12 isprovided without a film and at step (b) the SC thin film 10 is formed onthe SC substrate 12 by epitaxy.

The epitaxy process utilizes a SC substrate that is physically andchemically compatible with the thin film that grows on the substrate. Asa result, the use of a thin film of SC alloy materials or respectivemultiple thin films is contingent upon the availability of anappropriate SC substrate, thereby severely limiting its utilization.Epitaxy may be used to form a SC GaN thin film on sapphire substratesbecause SC GaN substrates are not well commercialized, resulting in theformation of structural defects in SC GaN thin films associated withphysical and chemical mismatches that exist between GaN and sapphire.

FIG. 2 shows another method for forming a composite 21 having a SC thinfilm 20 disposed on an NSC substrate 22 that is incompatible (e.g.,foreign) with the AB_(x) alloy of the SC thin film 20. The SC thin film20 is substantially similar to the SC thin film 10. As used herein, theterm “incompatible” and “foreign” denote a material that is physicallyand chemically different from the alloy of the thin film.

At step (a) a starting NSC substrate 22 is provided, at step (b) asource 24 of AB_(x) alloy is provided, at step (c) the SC thin film 20is formed from the source 24 of AB_(x) alloy, and step (d) the SC thinfilm 20 is placed on the NSC substrate 22. While this method is arelatively simple process, it has a number of disadvantages. First, asource of AB_(x) alloy needs to be prepared. This process is oftendifficult when seen from thermodynamic perspectives as the number ofchemical elements (i.e., A, B, C, etc.) increases. Second, the SC thinfilm 20 needs to be extracted from the source 24, which becomesextremely challenging as the thickness of the SC thin 20 film decreases.Third, the SC thin film 20 needs to be extracted from the source. Thisprocess is not scalable since the SC thin film 20 having large area(e.g., about 12 inches in diameter) is difficult to obtain. Fourth, theprocess of attaching the SC thin film 20 to the NSC substrate 22 reliesupon the presence of attractive interaction (e.g., van der Waals forces)between the SC thin film 20 and the NSC substrate 22. However, theattraction forces may not be strong enough to provide suitable adhesionand/or appropriate uniformity.

FIG. 3 shows yet another method for forming a composite 31 having a SCthin film 30 disposed on an NSC substrate 32 that is incompatible (e.g.,foreign) with the AB_(x) alloy of the SC thin film 30. The SC thin film30 is substantially similar to the SC thin film 10. At step (a) astarting NSC substrate 32 is provided, at step (b) an NSC thin film 34of AB_(x) alloy is formed on the NSC substrate 32, and at step (c) theNSC thin film 34 undergoes a phase transition upon being energized byvarious methods to form the SC thin film 30 with the AB_(y) alloy.Energy (e.g., laser) may be provided in various ways to induce a phasetransition in the NSC thin film 34. Energy may be provided externally(e.g., focusing a laser beam on the NSC thin film 34) to the NSC thinfilm 34 represented by an arrow 36 and/or by supplying energy throughthe NSC substrate 32 thereby energizing the NSC thin film 34 through theNSC substrate 32 as represented by an arrow 38. The NSC substrate 32 istransparent in order to allow for the laser beam to pass therethrough.As the laser is focused on the NSC thin film 34, a portion of its 2Dstructure is crystallized thereby forming the SC thin film 30 as thematerial undergoes melting at an elevated temperature and subsequentsolidification upon cooling.

In embodiments, these two schemes of providing external energy may beperformed separately or concomitantly. However, the method of FIG. 3also has a number of disadvantages. If the constituent chemical elementsA and B of the AB_(x) alloy of the NSC thin film 34 have different vaporpressures, then specific chemical composition x of the AB_(x) alloy ofthe NSC thin film 34 is not maintained during the phase transitionresulting in formation of the SC thin film 30 with the AB_(y) alloyrather than the AB_(x) formulation of the NSC thin film 34. Thus, if theB element has vapor pressure higher than that of the A element, theAB_(x) alloy of the NSC thin film 34 loses the B element resulting in adecrease in x, thus the NSC thin film 34 may become an SC or NSC thinfilm made almost entirely of the A element.

FIG. 4 shows a method according to the present disclosure for forming acomposite 41 having a SC thin film 40 disposed on a substrate 42 that isincompatible (e.g., foreign) with the AB_(x) alloy of the SC thin film30 without a change in x of the AB_(x) alloy. The SC thin film 40 issubstantially similar to the SC thin film 10. The substrate 42 may be anSC or an NSC substrate.

At step (a) a starting substrate 42 is provided and at step (b) an NSCthin film 44 of AB_(x) alloy is applied onto the substrate 42, followedby application of a protection thin film 45 over the NSC thin film 44.At step (c) the NSC thin film 44 is exposed to energy to undergo a phasetransition upon being energized by various methods as described abovewith respect to FIG. 3. External energy may be provided to the NSC thinfilm 44 through the protection thin film 45 as represented by an arrow46. Energy may also be provided to the NSC thin film 44 through thesubstrate 42 as represented by an arrow 48. The substrate 42 and theprotection thin film 45 are transparent to the external energy (e.g.,focused laser) represented by the arrow 46. In embodiments, these twoschemes of providing external energy may be performed separately orconcomitantly. At step (d) the NSC thin film 44 becomes the SC thin film40 while retaining the original chemical composition x of the AB_(x)alloy, unlike during the method of FIG. 3. The protection thin film 45can either remain or be removed for further processing steps.

FIG. 5 shows a method, which is a variation of the method of FIG. 4,according to the present disclosure for forming a composite 51 having aSC thin film 50 disposed on a substrate 52 that is incompatible (e.g.,foreign) with the AB_(x) alloy of the SC thin film 60 without a changein x of the AB_(x) alloy. The SC thin film 50 is substantially similarto the SC thin film 10. The substrate 52 may be an SC or an NSCsubstrate.

At step (a) a starting substrate 52 is provided, at step (b) thesubstrate 52 is patterned to form a non-planar surface (i.e., protrudingmesa). As shown in FIG. 5, the substrate 52 may be patterned to form apattern, such as a protrusion 53 having a planar surface 53 a that isabove and parallel relative to a planar surface 52 a of the substrate52. The planar surface 53 a may have sloping edges 53 b at angle θdefined by the edges 53 b and the planar surface 52 a. The angle θ maybe any suitable angle and may be a negative angle, e.g., to form adepression 63 (FIG. 6) rather than the protrusion 53.

After the substrate 52 is patterned, an NSC thin film 54 of AB_(x) alloyis applied onto the substrate 52, followed by application of aprotection thin film 55 over the NSC thin film 54. The NSC thin film 54and the protection thin film 55 maintain the pattern of the protrusion53.

Steps (c) and (d) of FIG. 5 are substantially similar to the steps ofFIG. 4. At step (c) the NSC thin film 54 is exposed to energy to undergoa phase transition upon being energized by various methods as describedabove with respect to FIG. 3. External energy may be provided to the NSCthin film 54 through the protection thin film 55 as represented by anarrow 56. Energy may also be provided to the NSC thin film 54 throughthe substrate 52 as represented by an arrow 58. At step (d) the NSC thinfilm 54 becomes the SC thin film 50 while retaining the originalchemical composition x of the AB_(x) alloy. The protection thin film 55can either remain or be removed for further processing steps.

FIG. 6 shows a method, which is a variation of the method of FIG. 5,according to the present disclosure for forming a composite 61 having aSC thin film 60 disposed on a substrate 62 that is incompatible (e.g.,foreign) with the AB_(x) alloy of the SC thin film 60 without a changein x of the AB_(x) alloy. The SC thin film 60 is substantially similarto the SC thin film 10. The substrate 62 may be an SC or an NSCsubstrate.

At step (a) a starting substrate 62 is provided, at step (b) thesubstrate 62 is patterned to form a non-planar surface (i.e., depressingmesa). Such patterns—protruding mesas in FIG. 5(b) and depressing mesasin FIG. 6(b)—may coexist and both may be included on the substrate 62.

The substrate 62 may be patterned to form the depression 63 having aplanar surface 63 a that is below and parallel relative to a planarsurface 62 a of the substrate 62. The planar surface 63 a may havesloping edges 63 b at angle ϕ defined by the edges 63 b and the planarsurface 62 a. The angle ϕ may be any suitable angle and may be apositive angle, e.g., to form the protrusion 53 (FIG. 5) rather than thedepression 63 (FIG. 6).

After the substrate 62 is patterned, an NSC thin film 64 of AB_(x) alloyis applied onto the substrate 62, followed by application of aprotection thin film 65 over the NSC thin film 64. The NSC thin film 64and the protection thin film 65 maintain the pattern of the depression63. Steps (c) and (d) of FIG. 6 are substantially similar to the stepsof FIG. 4. At step (c) the NSC thin film 64 is exposed to energy toundergo a phase transition upon being energized by various methods asdescribed above with respect to FIG. 3. External energy may be providedto the NSC thin film 64 through the protection thin film 65 asrepresented by an arrow 66. Energy may also be provided to the NSC thinfilm 64 through the substrate 62 as represented by an arrow 68. At step(d) the NSC thin film 64 becomes the SC thin film 60 while retaining theoriginal chemical composition x of the AB_(x) alloy. The protection thinfilm 65 can either remain or be removed for further processing steps.

FIG. 7 shows a method according to the present disclosure for forming acomposite 71 having a SC thin film 70 disposed on a substrate 72 that isincompatible (e.g., foreign) with the AB_(x) alloy of the SC thin film70 without a change in x of the AB_(x) alloy. The SC thin film 70 issubstantially similar to the SC thin film 10. The substrate 72 may be anSC or an NSC substrate.

At step (a) a starting substrate 72 is provided and at step (b) an NSCthin film 74 of AB_(x) alloy is applied onto the substrate 72, followedby application of a protection thin film 75 over the NSC thin film 74. Aportion of the NSC thin film 74 is removed to expose a portion 74 a ofthe NSC thin film 74. At step (c) the NSC thin film 74 is exposed toenergy to undergo a phase transition upon being energized by variousmethods as described above with respect to FIG. 3. External energy maybe provided to the NSC thin film 74 through the protection thin film 75as represented by an arrow 76 or directly through the exposed portion 74a. Energy may also be provided to the NSC thin film 74 through thesubstrate 72 represented by an arrow 78. The substrate 72 and theprotection thin film 75 are transparent to the external energy beingapplied. In embodiments, these two schemes of providing external energymay be performed separately or concomitantly. At step (d) the NSC thinfilm 74 becomes the SC thin film 70 while retaining the originalchemical composition x of the AB_(x) alloy. The protection thin film 75can either remain or be removed for further processing steps.

FIG. 8 shows a method for forming a composite 81 having a SC thin film80 disposed on a substrate 82 that is incompatible (e.g., foreign) withthe AB_(x) alloy of the SC thin film 80. The SC thin film 80 issubstantially similar to the SC thin film 10. The substrate 82 may be anSC or an NSC substrate.

At step (a) a starting substrate 82 is provided and at step (b) an NSCthin film 84 of AB_(x) alloy is applied onto the substrate 82, followedby application of a protection thin film 85 over the NSC thin film 84.At step (c) the NSC thin film 84 is exposed to energy to undergo a phasetransition upon being energized by various methods as described abovewith respect to FIG. 3. External energy may be provided to the NSC thinfilm 84 through the protection thin film 85 as represented by an arrow86. Energy may also be provided to the NSC thin film 84 through thesubstrate 82 represented by an arrow 88. The substrate 82 and theprotection thin film 85 are transparent to the external energy beingapplied. In embodiments, these two schemes of providing external energymay be performed separately or concomitantly.

External energy may be a continuous wave laser with a non-Gaussian beamprofile (e.g., line shaped beam profile) scanning through the NSC thinfilm 84 to prompt continuous lateral crystal growth synchronized withlaser scanning. The laser may have a line pattern 87 having apredetermined width w and length l. As the line pattern 87 is scannedacross the NSC thin film 84, the laser may be perpendicular to a planedefined by the NSC thin film 84. The length of the line pattern 87 maybe from about 1 μm to about 10 mm. Laser scanning may result information of a polycrystalline (PC) thin film with longitudinal grainsalong scanning direction of the laser due to an inhomogeneous graingrowth 89 at the solid-melt interface. At step (d) the NSC thin film 84becomes the SC thin film 80. The protection thin film 85 can eitherremain or be removed for further processing steps.

FIG. 9 shows a method for forming a composite 91 having a SC thin film90 disposed on a substrate 92 that is incompatible (e.g., foreign) withthe AB_(x) alloy of the SC thin film 90. The SC thin film 90 issubstantially similar to the SC thin film 10. The substrate 92 may be anSC or an NSC substrate.

At step (a) a starting substrate 92 is provided, at step (b) thesubstrate 92 is patterned to form a non-planar surface. The substrate 92may be patterned to form the depression 93 having a planar surface 93 athat is below and parallel relative to a planar surface 92 a of thesubstrate 92. The planar surface 93 a may have sloping edges 93 b atangle ϕ defined by the edges 93 b and the planar surface 92 a. The angleϕ may be any suitable angle and may be a positive angle, e.g., to form aprotrusion 103 (FIG. 10) rather than the depression 93 (FIG. 9).

After the substrate 92 is patterned, an NSC thin film 94 of AB_(x) alloyis applied onto the substrate 92, followed by application of aprotection thin film 95 over the NSC thin film 94. The NSC thin film 94and the protection thin film 95 maintain the pattern of the depression93. Steps (c) and (d) of FIG. 9 are substantially similar to the stepsof FIG. 4. At step (c) the NSC thin film 94 is exposed to energy toundergo a phase transition upon being energized by various methods asdescribed above with respect to FIG. 3. External energy may be providedto the NSC thin film 94 through the protection thin film 95 asrepresented by an arrow 96. Energy may also be provided to the NSC thinfilm 94 through the substrate 92 represented by an arrow 98. Thesubstrate 92 and the protection thin film 95 are transparent to theexternal energy being applied. In embodiments, these two schemes ofproviding external energy may be performed separately or concomitantly.

External energy may be a laser supplied by a continuous wave line-shapedlaser scanning through the NSC thin film 94 to prompt continuous lateralcrystal growth synchronized with laser scanning. The laser may have aline pattern 97 having a predetermined width w and length l. The lengthof the line pattern 97 may be from about 1 μm to about 10 mm. As theline pattern 97 is scanned across the NSC thin film 94, the laser may beperpendicular to a plane defined by the NSC thin film 94 and in parallelwith the edge of patterns 99 defined through the NSC thin film 94. Atstep (d) the NSC thin film 94 becomes a SC thin film 90 retaining theoriginal chemical composition x of AB_(x). The protection thin film 95can either remain or be removed for further processing steps.

FIG. 10 shows a method for forming a composite 101 having a SC thin film100 disposed on a substrate 102 that is incompatible (e.g., foreign)with the AB_(x) alloy of the SC thin film 100. The SC thin film 100 issubstantially similar to the SC thin film 100. The substrate 102 may bean SC or an NSC substrate.

At step (a) a starting substrate 102 is provided, at step (b) thesubstrate 102 is patterned to form a non-planar surface. The substrate102 may be patterned to form a protrusion 103 having a planar surface103 a that is above and parallel relative to a planar surface 102 a ofthe substrate 102. The planar surface 103 a may have sloping edges 103 bat angle θ defined by the edges 103 b and the planar surface 102 a. Theangle θ may be any suitable angle and may be a negative angle, e.g., toform the depression 93 (FIG. 9) rather than the protrusion 103.

After the substrate 102 is patterned, an NSC thin film 104 of AB_(x)alloy is applied onto the substrate 102, followed by application of aprotection thin film 105 over the NSC thin film 104. The NSC thin film104 and the protection thin film 105 maintain the pattern of theprotrusion 103. Steps (c) and (d) of FIG. 10 are substantially similarto the steps of FIG. 4. At step (c) the NSC thin film 104 is exposed toenergy to undergo a phase transition upon being energized by variousmethods as described above with respect to FIG. 3. External energy maybe provided to the NSC thin film 104 through the protection thin film105. Energy may also be provided to the NSC thin film 104 through thesubstrate 102. The substrate 102 and the protection thin film 105 aretransparent to the external energy being applied. In embodiments, thesetwo schemes of providing external energy may be performed separately orconcomitantly.

External energy may be a continuous wave laser with a non-Gaussian beamprofile (e.g., line shaped beam profile) scanning through the NSC thinfilm 104 to prompt continuous lateral crystal growth synchronized withlaser scanning. The laser may have a line pattern 107 having apredetermined width and length. The length of the line pattern 107 maybe from about 1 μm to about 10 mm. As the line pattern 107 is scannedacross the NSC thin film 104, the laser may be perpendicular to a planedefined by the NSC thin film 104 and in parallel with the edge ofpatterns 109 defined through the NSC thin film 104. At step (d) the NSCthin film 104 becomes a SC thin film 110 retaining the original chemicalcomposition x of AB_(x). The protection thin film 105 can either remainor be removed for further processing steps.

FIG. 11 shows a method for forming a composite 111 having a SC thin film110 disposed on a substrate 112 that is incompatible (e.g., foreign)with the AB_(x) alloy of the SC thin film 110. The SC thin film 110 issubstantially similar to the SC thin film 110. The substrate 112 may bean SC or an NSC substrate.

At step (a) a starting substrate 112 is provided, at step (b) an NSCthin film 114 of AB_(x) is applied onto the substrate 112, followed byapplication of a protection thin film 115 over the NSC thin film 114.Steps (c) and (d) of FIG. 11 are substantially similar to the steps ofFIG. 4. At step (c) the NSC thin film 114 is exposed to energy toundergo a phase transition upon being energized by various methods asdescribed above with respect to FIG. 3. External energy may be providedto the NSC thin film 114 through the protection thin film 115 asrepresented by an arrow 106. Energy may also be provided to the NSC thinfilm 114 through the substrate 112 represented by an arrow 108. Thesubstrate 112 and the protection thin film 115 are transparent to theexternal energy being applied. In embodiment, these two schemes ofproviding external energy may be performed separately or concomitantly.

As shown in step (c-2), external energy may be a continuous wave laserwith such a non-Gaussian beam profile as chevron-shaped beam profilescanning through the NSC thin film 114 to prompt continuous lateralcrystal growth synchronized with laser scanning. A continuous-wave laserdiode with a micrometer-scale chevron-shaped beam profile, namely, amicro-chevron laser beam (μ-CLB) may be used. The μ-CLB may generate achevron pattern 117 having a predetermined sharp angle α between twoline portions 117 a and 117 b. The angle α may be from about 30° toabout 90°, and in embodiments may be about 45°. The angle α is selectedto provide for better surface coverage. Distance d between end points ofthe line portions 117 a and 117 b may be from about 1 μm to about 10 mm.

The μ-CLB that provides laser light may be generated by having theoutput of a multimode laser beam pass through a one-sided dove prismthat converts the laser beam into a chevron shape focused on the NSCthin film 114. The substrate 112 along with the NSC thin film 114 may bemounted on a linearly moving stage that advanced at a speed of about 1mm/s with respect to the fixed position of the μ-CLB. A semi-infinitecrystallized strip region formed with a width comparable to or less thanthe nominal spot size of the chevron pattern 117, while the length ofthe strip is only limited by the linear translational motion of themoving stage and may be extended as needed.

The μ-CLB that provides laser light may be generated by having theoutput of a multimode laser beam pass through a one-sided dove prismthat converts the laser beam into a chevron shape focused on the NSCthin film 114. The substrate 112 along with the NSC thin film 114 may bemounted on a linearly moving stage that advanced at a speed of about 1mm/s with respect to the fixed position of the μ-CLB. A semi-infinitecrystallized strip region formed with a width comparable to or less thanthe nominal spot size of the chevron pattern 117, while the length ofthe strip is only limited by the linear translational motion of themoving stage and may be extended as needed.

As shown in step (c-2), the chevron pattern 117 is scanned across theNSC thin film 114, the laser may be perpendicular to a plane defined bythe NSC thin film 114. This is shown by a strip of the SC thin film 115left behind after the passage of the chevron pattern 117. The chevronpattern 117 may be oriented in any manner with the edge of patterns (notshown) defined through the NSC thin film 114. At step (d) the NSC thinfilm 114 becomes the SC thin film 110 retaining the original chemicalcomposition x of AB_(x). The protection thin film 115 can either remainor be removed for further processing steps.

The thin film composites according to the present disclosure may be usedin a broad range of industries including microelectronics,optoelectronics, photonics, bioelectronics, and energy generation andstorage industries that are currently limited to either high-cost SCthin films made of multiple primary chemical elements on a SC substrateor low performance NSC thin films made of multiple primary chemicalelements on a NSC substrate.

FIG. 12 shows a method for forming a composite 201 having a SC thin film210 disposed on a substrate 212 that is incompatible (e.g., foreign)with the alloy of the SC thin film 210. The alloy of SC thin film 210may be a SC metal oxide such as cuprous oxide (Cu₂O). The substrate 212is made of a non-single-crystalline (NSC) material, such as glass orfused silica. The NSC thin film 214 and the crystalized SC strip 210 mayhave a length from about 0.1 mm to about 10 mm and a width from about 1μm to about 5 μm.

At step (a) the starting substrate 212 is provided, at step (b) an NSCthin film 214 of precursor alloy is applied onto the substrate 212,followed by application of a protection thin film 215 over the NSC thinfilm 214. The precursor alloy of the NSC thin film 214 may be cupricoxide (CuO) and may have a thickness from about 100 nm to about 150 nm,and in embodiments may be about 130 nm. The protection thin film 215 maybe formed from amorphous carbon (a-C) and may have a thickness fromabout 5 nm to about 20 nm, and in embodiments may be about 10 nm. TheNSC thin film 214 and the protection thin film 215 may be depositedsequentially by radio frequency (RF) and direct current (DC) magnetronsputtering performed at a temperature from about 20° C. to about 30° C.in a vacuum (e.g., vacuum chamber).

Steps (c) and (d) of FIG. 12 are substantially similar to the steps ofFIG. 11. At step (c) the NSC thin film 214 is exposed to energy toundergo a phase transition upon being energized by various methods asdescribed above with respect to FIG. 3. External energy may be providedto the NSC thin film 214 through the protection thin film 215 asrepresented by an arrow 216. Energy may also be provided to the NSC thinfilm 214 through the substrate 212 represented by an arrow 218. Thesubstrate 212 and the protection thin film 215 are transparent to theexternal energy being applied. In embodiment, these two schemes ofproviding external energy may be performed separately or concomitantly.

As shown in step (c-2), external energy may be a laser supplied by acontinuous wave chevron-shaped laser scanning through the NSC thin film214 to prompt continuous lateral crystal growth synchronized with laserscanning. A continuous-wave laser diode with a micrometer-scalechevron-shaped beam profile, namely, a micro-chevron laser beam (μ-CLB)may be used. The μ-CLB may have a wavelength from about 400 nm to about450 nm, and in embodiments may be about 405 nm. The output power of theμ-CLB may be from about 70 mW to about 100 mW, and in embodiments may beabout 80 mW. The μ-CLB may generate a chevron pattern 217 having apredetermined angle α between two line portions 217 a and 217 b. Theangle α may be from about 30° to about 90°, and in embodiments may beabout 45°. Distance d between end points of the line portions 217 a and217 b may be from about 1 μm to about 10 mm.

The μ-CLB that provides laser light may be generated by having theoutput of a multimode laser beam pass through a one-sided dove prismthat converts the laser beam into a chevron shape focused on the NSCthin film 214. The substrate 212 along with the NSC thin film 214 may bemounted on a linearly moving stage that advanced at a speed of about 1mm/s with respect to the fixed position of the μ-CLB. A semi-infinitecrystallized strip region formed with a width comparable to or less thanthe nominal spot size of the chevron pattern 217, while the length ofthe strip is only limited by the linear translational motion of themoving stage and may be extended as needed.

As shown in step (c-2), the chevron pattern 217 is scanned across theNSC thin film 214, the laser may be perpendicular to a plane defined bythe NSC thin film 214. This is shown by a strip of the SC thin film 215left behind after the passage of the chevron pattern 217.

The thickness of the NSC thin film 214 is selected to obtain sufficientabsorption from the μ-CLB at the selected wavelength. In embodiments,the thickness of the NSC thin film 214 may be about 130 nm to obtainsufficient absorption from the μ-CLB at the wavelength of about 405 nm.The chevron pattern 217 may be oriented in any manner with the edge ofpatterns (not shown) defined through the NSC thin film 214. At step (d)the NSC thin film 214 becomes a SC thin film 210 having a crystalizedcomposition of Cu₂O since the NSC thin film 214 is formed from CuO. Theprotection thin film 215 can either remain or be removed for furtherprocessing steps.

The following Examples illustrate embodiments of the present disclosure.These Examples are intended to be illustrative only and are not intendedto limit the scope of the present disclosure. Also, parts andpercentages are by weight unless otherwise indicated. As used herein,“room temperature” or “ambient temperature” refers to a temperature fromabout 20° C. to about 25° C.

EXAMPLES Example 1

This example describes preparation of a substrate having asingle-crystal Cu₂O strip crystalized from a CuO thin film using amicro-chevron laser beam (μ-CLB).

A 130-nm-thick CuO thin film was deposited on fused silica substratesand subsequently capped with a 10-nm-thick a-C layer. The CuO thin filmand a-C capping layer were deposited sequentially by radio frequency(RF) and direct current (DC) magnetron sputtering at room temperature,respectively, in a single vacuum chamber without breaking the vacuum.CuO and C sputtering targets with a purity of about 99.99% were used. Athickness of about 130 nm was chosen for the CuO thin film to obtainsufficient absorption of the μ-CLB at the wavelength of 405 nm. The realand imaginary parts of the CuO thin film refractive index were measuredby spectroscopic ellipsometry and determined to be n=2.37 and k=1.01 at405 nm, respectively. The 10-nm-thick a-C cap layer was found sufficientto reduce incongruent evaporation during the crystallization. The μ-CLBthat provided laser light with a nominal spot size on the order of 10 μmand with a predetermined angle α of 45°. was generated by having theoutput of a 405 nm wavelength multimode CW LD pass through a one-sideddove prism that converted the original beam into a chevron shape focusedon the thin film sample. The thin film sample was mounted on a linearlymoving stage that advanced at a speed of about 1 mm/s with respect tothe fixed position of the μ-CLB with the laser power output set toapproximately 79 mW. A semi-infinite crystallized strip region wasformed with a width comparable to or less than the nominal spot size 10μm of the μ-CLB, while the length of the strip is only limited by thelinear translational motion of the moving stage and can be extended asneeded.

Example 2

This example describes analysis of the substrate of Example 1.

Electron backscatter diffraction (EBSD) analysis was carried out on acrystallized strip in a scanning electron microscope (SEM) to determineits phase and crystallinity. The crystallized strip was identified asCu₂O, also known as cuprite, a cubic crystal system with a latticeparameter of about 0.425 nm, belonging to the space group PnAm spacegroup. With reference to FIG. 13, color EBSD crystallographicorientation map 300 in the normal direction (ND) and an orientation map302 in the laser scanning direction (SD) of the crystallized Cu₂O strip,referred to as single-crystal Cu₂O strip (SC-Cu₂O strip) hereafter, areshown in grayscale. Shown in FIG. 13 also is the inverse pole FIG. 304illustrating a color map (shown in grayscale) corresponding torespective crystal orientations. FIG. 13 also shows a boundary map 306of random angle grain boundaries (RGB, 5°-65°) and coincidence sitelattice (CSL) boundaries, indicated by black and red lines,respectively. Only a few CSL boundaries are found in the SC-Cu₂O strip.RGBs were found to exist at either side of the strip, and no RGBscompletely crossed the strip, indicating the strip was a continuoussingle crystal along its length as well as across its width.

Diagram 308 illustrates the posture of the cubic unit cell seen from NDat corresponding positions in the orientation map 300, crystalorientation is rotating while the crystal advances in a negative pitchdirection. Positive pitch rotation suggests that the density of Cu₂O washigher in its solid phase than in its liquid phase, or that there wasdesorption of some component taking place at the surface duringsolidification.

FIG. 14 showed a top-view SEM image of the SC-Cu₂O strip. RGBs existedperiodically on the strip and are synchronized with crest regions of thewave like features. This is possibly due to the segregation of compoundsother than Cu₂O might be the reason. The orientation of domains seen inorientation maps 300 and 302 changes gradually and continuously alongthe strip.

The arrow 310 indicates the direction in which μ-CLB advanced withrespect to the sample. The overall surface of the SC-Cu₂O strip wastextured with wave-like features, periodically found approximately 4 μm.This mushrooming of the solid material located along the center of thestrip suggests agglomeration of Cu₂O film takes place when meltingoccurs. The smooth region adjacent to the SC-Cu₂O strip shows a regionon the original CuO thin film not subjected to the laser crystallizationand referred to as non-single-crystal CuO region (NSC-CuO region)henceforth.

The EBSD results indicated that the original CuO covered with an a-C caplayer was transformed into Cu₂O. The transformation was divided into thefollowing two parts that occurred concurrently: the loss of oxygen inthe reduction of CuO into Cu₂O and the acquisition of oxygen by the a-Ccap layer. The reduction of CuO took a straight path to the formation ofcopper without going through the formation of Cu₂O when CuO was providedin the form of bulk. However, CuO present in a low-dimension structure(e.g., nanoparticles and thin films) were found to reduce to Cu₂O. Thus,where CuO is present in the form of thin film covered with an a-C caplayer, as in Example 1, the a-C cap layer provides an interface at whichthe reduction of CuO to Cu₂O is promoted. Although Cu₂O and CuO completein a reduction environment; however, the reduction in CuO dominates.Furthermore, an a-C layer that covers the original CuO thin film isexpected to exhibit physical properties that vary locally depending onhow it was prepared. For instance, their density can vary within a widerange, resulting in anisotropy in their structural properties andsubstantially influencing their physicochemical properties in acquiringforeign oxygen. As the density decreased, a substantial increase inoxidation rate was observed at 800° C. In addition, as the temperaturewas raised, the oxidation rate of carbon was found to increasemonotonically until a characteristic temperature was reached and remainnearly constant beyond the characteristic temperature, suggesting thatthe rate of oxidation of carbon at high temperatures depends on gaseousdiffusion of oxygen through the surrounding atmosphere, in other words,the a-C cap layer regulated the amount of oxygen that needed to bereleased from the CuO thin film during the crystallization of Cu₂O andpresumably residual oxygen was released in the form of oxygen diatomicmolecules and/or of volatile oxo carbon through the a-C cap layer.

Raman spectroscopy analysis was carried out with an excitationwavelength of about 514.5 nm to confirm the phase and assess thecrystallinity of the SC-Cu₂O strip. FIG. 15 shows Raman spectracollected from the SC-Cu₂O strip (solid line) and the NSC-CuO region(dashed line). The spectrum from the SC-Cu₂O strip showed several phononmodes unique to the crystalline phase of Cu₂O, while that from theNSC-CuO region showed no identifiable phonon modes. Characteristic modes(e.g., modes at about 300 cm⁻¹ and about 350 cm⁻¹) associated with CuOwere not seen in the spectra of FIG. 15, confirming that the SC-Cu₂Ostrip is predominantly made of Cu₂O. The two phonon modes at 218 cm⁻¹and 436 cm⁻¹ represent second and fourth-order overtones, respectively,of the phonon mode at 109 cm⁻¹. An inactive Raman mode that is onlyinfrared allowed in perfect Cu₂O crystal, indicated that the SC-Cu₂Ostrip bears structural integrity comparable to Cu₂O formed underconditions near thermal equilibrium. The presence of the well-definedsecond-order overtone centered at 218 cm⁻¹ further indicates that theSC-Cu₂O strip has high crystallographic integrity. The mode at 640 cm⁻¹is most likely associated with an allowed LO phonon mode. Althoughcomplex oxidation kinetics of copper at room temperature resulting inthe interplay between the two phases, CuO and Cu₂O, would contribute tothe Raman analysis, the observed phonon modes may largely be attributedto Raman selection rules lifted due to point defects such as Cuvacancies commonly present in p-type Cu₂O.

Photoluminescence (PL) spectra of the NSC-CuO region and the SC-Cu₂Ostrip were also collected with a Perkin Elmer luminescence spectrometerequipped with a xeon lamp. The excitation wavelength used for the PLanalysis was 400 nm, and the PL spectra were collected in the spectralrange from 1.25 to 2.625 eV at room temperature. For the PL measurement,a special coupon with 0.1 mm×2.0 mm area—strip region—was prepared bycrystallizing multiple 10 μm×2 mm SC-Cu₂O strips spatially separated bya fixed interval of 6 μm. Multiple strips were used to provide thevolume overlap between the excitation light and the total volume ofstrips being excited, large enough to provide luminescence withsufficient intensity for the spectrometer to resolve. The excitationlight source had a rectangular beam spot with an area comparable to therectangular area filled with the SC-Cu₂O strips.

FIG. 16 shows three PL spectra; the spectrum PL-NSC (small dashed line)was collected from the NSC-CuO region. The two PL spectra, PL-SC (∥) inblue and PL-SC (+), were collected from the strip region by placing therectangular excitation beam spot parallel (∥) and perpendicular (+),respectively, to the strips in the strip region. In other words, theonly difference between the PL-SC (∥) and PL-SC (+) spectra was theareal size of the overlap between the rectangular excitation beam spotand the strip region. As expected, the PL-NSC spectrum confirms that noappreciable radiative recombination takes place in the NSC-CuO regionwhile the two spectra, the PL-SC (∥) and PL-SC(+) spectra, exhibitingsix distinctive peaks indicate that complex radiative recombinationdynamics are present in the SC-Cu₂O strip region. All PL peakintensities were higher for the PL-SC(∥) than those of the PL-SC(+)spectrum presumably because the net volume of crystallized Cu₂O beingoptically excited in the PL measurement is much larger in the PL-SC(∥)spectrum than in the PL-SC(+) spectrum.

There were six narrow emission peaks, centered, respectively, about 1.37eV, 1.62 eV, 2.05 eV, 2.17 eV, 2.29 eV, and 2.56 eV. The 2.17 eVemission is most likely to originate from the band edge recombination inSC-Cu₂O. The 2.17 eV emission, however, is weak because radiativerecombination at the fundamental band edge is dipole forbidden. The 2.05eV emission may be attributed to the first excitonic transition (n=1)associated with the yellow series of Cu₂O. The binding energy of thefirst or yellow excitonic series has been calculated to be approximately150 meV, which is comparable to 160 meV—the difference in energy betweenthe peak position of the band edge emission at 2.17 eV and the 2.05 eVemission seen in FIG. 16. This 2.05 eV emission, along with theemissions centered around 1.37 eV and 1.62 eV, may also be associatedwith an inter-band energy levels related to oxygen defects The origin ofthe 2.29 eV and 2.56 eV emissions may also be excitonic, possiblyoriginating from the green and the blue excitonic series that have theirhighest energy transitions at 2.304 eV and 2.624 eV, respectively. Thenarrow linewidth of the emission peaks in the PL spectrum would suggestthe involvement of radiative transitions between discrete andwell-defined energy levels.

The special coupon prepared for collecting the PL spectra was also usedto obtain optical absorbance spectra shown in FIG. 16. The absorbancespectra, ABS-NSC (dotted line) and ABS-SC (large dash lines), werecollected from the NSC-CuO region and SC-Cu₂O strip region,respectively, by measuring transmittance spectra using a Jascov-670UV-Vis-NIR spectrophotometer in the energy range of 1.25 eV to 4.25eV and subsequently converted to absorbance spectra. An appropriateshadow mask was used to discriminate the SC-Cu₂O strip region and theNSC region that coexist on the coupon.

As seen in FIG. 16, the ABS-NSC spectrum shows a monotonic increase withenergy until it unveils a sharp increase reaching its maximum,approximately at 3.7 eV. The ABS-SC spectrum shows an increasing trendsimilar to that of the ABS-NSC spectrum until it suddenly reaches itsmaximum, approximately 4.15 eV. There are three distinct features, inthe ABS-SC spectrum, not seen in the ABS-NSC spectrum: a step-likefeature at approximately 2.65 eV, another step-like feature atapproximately 3.6 eV, and the energy at which the absorbance reaches itsmaximum is approximately 0.5 eV higher (i.e., a blue-shift) incomparison with that seen in the ABS-NSC spectrum. The 2.65 eV step maybe ascribed to a transition in the blue exciton series and the step at3.6 eV may be attributed to a high energy X1-X3 transition in theBrillouin zone, additionally a marked absorption edge with a peak orstep-like feature about the associated band edge energy of 2.17 eV isnot seen because of the forbidden band edge transitions Cu₂O is knownfor. If the marked features seen in the PL-SC and the ABS-SC spectracollected from the SC-Cu₂O strips are associated with carrier dynamicsinvolving excitons, because all the measurements displayed in FIG. 16were carried out at room temperature, they would need to originate fromsuch environment as quantum-confined structures (e.g., quantum well)that strengthen the exciton binding energy. Since absorption spectradirectly reflect the characteristics of the joint density of states insemiconducting materials, the presence of step-like features seen in theABS-SC spectrum suggests the presence of quantum confined structures inthe SC-Cu₂O strips. Apart from the involvement of quantum confinement,the step-like features at approximately 2.65 eV and approximately 3.6 eVmay suggest the involvement of inter-band transitions in the vicinity ofthe U-point often seen in high quality bulk Cu₂O, further indicating thepresence of high crystallographic integrity of the SC-Cu₂O strips.

Laser-induced crystallization has been implemented for semiconductorthin films for decades. However, its practical applications have beenlimited to only few successful demonstrations on thin films of singleelement semiconductors and related devices exclusively designed toaccommodate the major limiting factor of the laser crystallization beingthe use of femtosecond and excimer lasers. This disclosure provideslaser-induced crystallization of non-single-crystal CuO intosingle-crystal Cu₂O, a multi-element semiconductor, using CW LD with aμ-CLB. The SC-Cu₂O strips had a length extending to several millimetersand width reaching 5 μm. The optical studies done on the SC-Cu₂O stripsat room temperature revealed complex and unusual emission and absorptioncharacteristics most likely associated with excitonic transitions,suggesting the presence of quantum-confinement effects, this was notexplicitly intended in our laser-induced crystallization process. Theteachings of the present disclosure may be used to obtain single-crystalthin films of alloy semiconductors with quality and dimensions requiredfor a range of devices not currently feasible.

It will be appreciated that of the above-disclosed and other featuresand functions, or alternatives thereof, may be desirably combined intomany other different systems or applications. Various presentlyunforeseen or unanticipated alternatives, modifications, variations orimprovements may be subsequently made by those skilled in the art whichare also intended to be encompassed by the following claims. Unlessspecifically recited in a claim, steps or components of claims shouldnot be implied or imported from the specification or any other claims asto any particular order, number, position, size, shape, angle, ormaterial.

1. A method for forming a composite comprising: applying a thin filmformed from a first non-single-crystalline alloy onto a substrate formedfrom a second non-single-crystalline alloy; and supplying energy to thethin film through the substrate to form a single-crystalline alloy. 2.The method according to claim 1, wherein the secondnon-single-crystalline alloy is physically and chemically different fromthe first non-single-crystalline alloy.
 3. The method according to claim1, wherein supplying energy includes focusing a laser beam onto the thinfilm.
 4. The method according to claim 3, wherein the laser beam has aline pattern having a length from about 1 micron (μm) to about 10 mm. 5.The method according to claim 4, wherein focusing the laser beamincludes focusing the laser beam perpendicular to a plane defined by thethin film.
 6. The method according to claim 5, wherein focusing thelaser beam includes focusing the laser beam parallel to a plurality ofedge patterns defined through the thin film.
 7. The method according toclaim 3, wherein the laser beam has a chevron pattern having two lineportions with a distance between end points of the two line portionsbeing from about 1 μm to about 10 mm.
 8. The method according to claim1, wherein the first non-single-crystalline alloy has a formula ofAB_(x), wherein A is gallium and B is selected from the group consistingof arsenic and nitrogen.
 9. The method according to claim 1, furthercomprising: forming a pattern on the substrate, wherein the pattern isat least one of a depression or a protrusion.
 10. The method accordingto claim 9, wherein the substrate has a first planar surface and thepattern has a second planar surface that is parallel to the first planarsurface.
 11. The method according to claim 1, applying a protection filmonto the thin film; and supplying energy to the thin film through atleast one of the protection film or the substrate to form asingle-crystalline alloy.
 12. A method for forming a compositecomprising: applying a thin film formed from a non-single-crystallineoxide onto a second non-single-crystalline material; and supplyingenergy to the thin film through the second non-single-crystallinematerial to form a single-crystalline oxide.
 13. The method according toclaim 12, wherein the non-single-crystalline oxide is cupric oxide. 14.The method according to claim 13, wherein the single-crystalline oxideis cuprous oxide.
 15. The method according to claim 12, whereinsupplying energy includes focusing a laser beam having a micron chevronpattern.
 16. The method according to claim 15, wherein the laser beamhas a wavelength from about 400 nm to about 450 nm.
 17. The methodaccording to claim 16, wherein the non-single-crystalline oxide has athickness selected to absorb energy of the laser beam at the wavelength.18. The method according to claim 17, wherein the thickness is fromabout 120 nm to about 140 nm.
 19. The method according to claim 12,further comprising: applying a protection film onto the thin film; andsupplying energy to the thin film through at least one of the protectionfilm or the second non-single-crystalline material to form asingle-crystalline oxide.
 20. The method according to claim 19, whereinthe protection film is formed from an amorphous carbon.
 21. The methodaccording to claim 20, wherein the protection film has a thickness fromabout 5 nm to about 20 nm.
 22. A semiconductor device formed using themethod of claim 12.